期刊论文

Yuan, Xingzhong;Jiang, Longbo;Liang, Jie

英文

Chemical Engineering Journal

1385-8947

2019

356

371-381

10.1016/j.cej.2018.09.079

The crystal structure properties were investigated by the XRD patterns. As depicted in Fig. 1a, pure In2S3 prepared by the direct precipitation is amorphous. The pure In2S3 exhibited two broad peaks centered at around 29.11° and 50.40°. Beside, as shown in Fig. 1a, pure InVO4 can be well-indexed as an orthorhombic phase of InVO4 (JCPDS 71-1689). The sharp and strong diffraction peaks indicates that the pure InVO4 is well-crystallized and no other impurity peaks observed in the patterns. After

本校为其他机构

Semiconductor heterostructures have attracted extensive interest in photocatalytic degradation of antibiotic pollutants. In this study, a novel In2S3/InVO4 heterojunction was prepared via a simple in-situ anion exchange method by reacting pre-synthesized InVO4 microspheres with Na2S in an aqueous solution. The structures, morphologies and optical properties of the as-prepared samples were well characterized by XRD, SEM, EDS, TEM, XPS, N2 adsorption–desorption, UV–Vis absorption spectra, PL, photocurrent and electrochemical impedance spectrosc...