Experimental investigation of electrical transport properties is carried out by in situ transmission electron microscopy (TEM) to explore the effect of local strain in ZnSe nanowires (NWs) on improvement of electron transport of Au-ZnSe NW-Au (M-S-M) nanostructure. The results show that the threshold voltage due to the Schottky barrier at the metal-semiconductor NW (M-S) nanocontact is found to decrease significantly when the ZnSe NW bends at the Au-ZnSe junction by the movable probe which can apply longitudinal compression, leading to current-...
