期刊论文

英文

电子器件

1005-9490

2000

23

3

204-209

10.3969/j.issn.1005-9490.2000.03.008

本校为其他机构

Based on the numerical and analytical method, the I V characteristics′ numerical model has been obtained for the bipolar voltage control transistor that is a novel device. Appling the software package of Mathematic, we have simulated both the voltage transfer and the voltage output characteristically graphs of BJMOSFET. The results show that BJMOSFET has a larger current capacity than the power MOSFET under the same operating conditions and structure pa...

本文采用数值计算和解析分析相结合的方法 ,建立了新型功率半导体器件——双极型压控晶体管 （BJMOSFET）电流 -电压特性的数值分析模型 ;运用 Mathematics数学分析软件 ,模拟得出 BJMOSFET电压转移特性曲线和电压输出特性曲线 ;得出的结果说明在相同的器件结构尺寸和工作情况下 ,与功率MOS晶体管相比 ,导通电压略有增加 ,但电流容量增加较大。