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Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal-semiconductor-metal nanostructure

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成果类型:
期刊论文
作者:
Tan, Yu;Wang, Yanguo*
通讯作者:
Wang, Yanguo
作者机构:
[Tan, Yu] Hunan Agr Univ, Coll Sci, Changsha 410128, Hunan, Peoples R China.
[Wang, Yanguo; Tan, Yu] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
[Wang, Yanguo] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
通讯机构:
[Wang, Yanguo] C
Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
语种:
英文
关键词:
Semiconductor nanowire;Electrical failure;Schottky barrier;Bias polarity;In situ TEM
期刊:
自然科学进展·国际材料(英文)
ISSN:
1002-0071
年:
2014
卷:
24
期:
2
页码:
109-115
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11274365]; Natural Science Foundation of Hunan Province, ChinaNatural Science Foundation of Hunan Province [14JJ4038]
机构署名:
本校为第一机构
院系归属:
理学院
摘要:
The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal-semiconductor-metal (M-S-M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M-S-M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky bather. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the ca...

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