National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [31471590, 61274007]; Beijing Natural Science FoundationBeijing Natural Science Foundation [4132074]
机构署名：
本校为第一机构
院系归属：
园艺园林学院
摘要：
The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced sub...
